Two-dimensional (2D) layers just one atom thick can be stripped from certain materials, such as graphene. The individual layers from one or more of these materials can then be restacked to create cage-like quantum heterostructures, which possess novel quantum properties. Incorporating magnetism into such a structure at room temperature could enable direct control of electron spin polarization in the transistor geometry. We are working to combine 2D semiconductors and magnetic insulators as an early step toward the creation of magnetic semiconductor heterostructures for spintronic devices. Along with proving the heterostructure concept, success in combining the two materials supports a subsequent goal, fabrication of a nanostructure consisting of a superconductor, semiconductor, and magnetic insulator. Achievement of these two goals will provide a fundamental building block for spintronics, address a vital materials challenge in the pathway to quantum computing, and potentially allow for the integration of processing and storage technologies in a single device platform.